Electron beam technology for power semiconductor device fabrication

Author

Zlobin, V.A.

Author_Institution

All-Russian Electrotech. Inst., Moscow, Russia

fYear

1993

fDate

13-16 Sep 1993

Firstpage

73

Abstract

The adaptation of electron beam lithography and electron beam testing techniques for production of new power semiconductor devices and some of their applications are presented. An approach is developed to decrease information volume for exposition of large chips by electron beam lithography. The computer arrangement for the electron beam system and the scheme of data preparation for electron beam lithography are proposed. It is shown that the method of electron beam induced current permits one to observe the 3-dimensional image of the gate p-n junction in a SIT structure. The electron beam testing technique is developed to measure the current gain distribution in power bipolar transistor and IGBT chips

Keywords

EBIC; bipolar transistors; electron beam lithography; electron beam testing; field effect transistors; insulated gate bipolar transistors; power transistors; semiconductor device testing; 3D image observation; IGBT chips; SIT structure; current gain distribution; data preparation; electron beam induced current; electron beam lithography; electron beam testing; gate p-n junction; power bipolar transistor; power semiconductor device fabrication;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics and Applications, 1993., Fifth European Conference on

Conference_Location

Brighton

Type

conf

Filename

265006