Effects of epitaxial doping on current characteristics in power BMFETs

Author

Persiano, G.V. ; Strollo, A.G.M. ; Spirito, P.

Author_Institution

Dept. of Electron. Eng., Naples Univ., Italy

fYear

1993

fDate

13-16 Sep 1993

Firstpage

40

Abstract

Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage even if the impurity concentration of the lightly n-doped region is increased from 2×10 ¹³ to 2×10¹⁴ cm^-3. The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltage

Keywords

bipolar transistors; junction gate field effect transistors; numerical analysis; power transistors; semiconductor device models; semiconductor doping; transients; 2D numerical simulation; DC current gain; MEDICI; bipolar mode FET; breakdown voltage; current characteristics; dynamic characteristics; epitaxial doping; gate-drain breakdown voltage; impurity concentration; lightly n-doped region; normally-off devices; power BMFETs; static characteristics; sustaining voltage; turn-off transient; turn-on transients;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics and Applications, 1993., Fifth European Conference on

Conference_Location

Brighton

Type

conf

Filename

265012