Technological parameter identification of PIN-diode using transient signal parameter fits

To accurately simulate power electronic circuits and devices, it is necessary that one should extract the device model parameters accurately. Generally, an identification is based on static I-V characteristic fits, yet the authors think that it is more efficient in the case of power semiconductor devices to base the identification on transient I-V characteristic fits. In order to achieve the identification, they use an error function depending on transient signal parameters (I_rm, V_rm and t _rr) instead of general continuous least square method. An identification procedure has been developed that consists of an estimation phase followed by an optimization phase. According to their observation and experiments, the authors have come to the conclusion that a simple one parameter optimization method is more efficient than other sophisticated methods. Preliminary results give a satisfying tolerance between simulation and experiment, and accurate identified parameter values