Title :
Intersubband transition device using AlN waveguide with GaN/AlN quantum wells
Author :
Kumtornkittikul, Chaiyasit ; Iizuka, Norio ; Suzuki, Nobuo ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo
Abstract :
We demonstrate fabrication of the first AlN-waveguide-based intersubband transition device. The device can operate at 1.3 mum, confirmed with the new waveguide-coupling measurement method. The intersubband absorption saturation in the device is also successfully demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light absorption; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; AlN; GaN-AlN; intersubband absorption saturation; intersubband transition device; quantum wells; waveguide-coupling measurement method; wavelength 1.3 mum; Absorption; Communication switching; Epitaxial growth; Epitaxial layers; Gallium nitride; Optical pulses; Optical switches; Optical waveguides; Quantum well devices; Waveguide transitions; (230.5590) Quantum-well devices; (250.7360) Waveguide modulators; (320.7080) Ultrafast devices;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628352
