• DocumentCode
    287311
  • Title

    450 V 30 A bipolar power transistor with two levels of metallisation

  • Author

    Hazard, P. ; Sebille, D. ; Senes, A.

  • Author_Institution
    Telemecanique, Nanterre, France
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    261
  • Abstract
    A 450 V 30 A n-p-n transistor dedicated to a DC contactor breaker is presented. At a forced gain of 10, it features a voltage drop of 0.5 V at 30 A. The turn off capability is 50 A under 800 V (VCB0) by using a dedicated drive. A two-layer metallisation has been developed in order to achieve this device. The structure has a fine emitter pitch. A fully brazed packaging is used to improve the surge behaviour and to decrease the stray inductance
  • Keywords
    bipolar transistors; metallisation; packaging; power transistors; semiconductor switches; 30 A; 450 V; 50 A; 800 V; DC contactor breaker; NPN device; bipolar power transistor; brazed packaging; fine emitter pitch; n-p-n transistor; stray inductance; surge behaviour; two level metallisation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Applications, 1993., Fifth European Conference on
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    265027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=287311