DocumentCode
2873259
Title
Two-dimensional calculation of transient terminal currents in amorphous silicon thin-film transistors
Author
Huang, J.S. ; Wu, C.H.
Author_Institution
University of Missouri-Rolla
fYear
1994
fDate
1994
Firstpage
44202
Lastpage
45297
Keywords
Amorphous silicon; Charge carrier density; Electron traps; Filling; Geometry; Insulation; Steady-state; Thin film transistors; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771121
Filename
771121
Link To Document