DocumentCode
2873668
Title
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs
Author
Agnihotri, Harshit ; Ranjan, Abhishek ; Tiwari, Pramod Kumar ; Jit, S.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fYear
2011
fDate
4-6 July 2011
Firstpage
327
Lastpage
328
Abstract
In this paper, a strong inversion drain current model incorporating various effects such as channel length modulation has been developed for a short-channel symmetrical triple material - double gate (TM-DG) MOSFET based on the drift current equation. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™.
Keywords
MOSFET; analytical drain current model; short-channel symmetrical TM-DG MOSFET; short-channel symmetrical triple material double gate MOSFET; simulation software ATLAS; Analytical models; Doping; Logic gates; MOSFETs; Materials; Mathematical model; Threshold voltage; TM DG MOSFET; drain current; drift current; hot- carrier effects;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2011 IEEE Computer Society Annual Symposium on
Conference_Location
Chennai
ISSN
2159-3469
Print_ISBN
978-1-4577-0803-9
Electronic_ISBN
2159-3469
Type
conf
DOI
10.1109/ISVLSI.2011.86
Filename
5992510
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