• DocumentCode
    2873692
  • Title

    The carrier transport in the GaSb/AiSb/lnAs/GaSb/AlSb/InAs resonant interband tunneling structures

  • Author

    Liu, M.H. ; Wang, Y.H. ; Houng, M.P. ; Chen, J.F. ; Cho, A.Y.

  • Author_Institution
    National Cheng-Kung University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    46087
  • Lastpage
    47183
  • Keywords
    Boundary conditions; Charge carrier processes; Current density; Current-voltage characteristics; Electric resistance; Molecular beam epitaxial growth; Optical coupling; Resonance; Resonant tunneling devices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771157
  • Filename
    771157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873692