Title :
GaN HEMTs: material, device, circuit technology and applications
Author :
Parikh, P. ; Wu, Y.F. ; Moore, M. ; Chavarkar, P. ; Wisleder, T. ; Mishra, U.K. ; Sheppard, S. ; Smith, R.P. ; Saxler, A. ; Alien, S. ; Milligan, J. ; Palmour, J.
Author_Institution :
Cree SBTC, Goleta, CA, USA
Abstract :
With the rapid progress and maturation over the last several years, wide bandgap GaN-based HEMTs are now regarded as the next generation technology leader for high frequency and high power device applications as stated in U. K. Mishra et al. (2002). The AlxGa1 - xN-GaN heterostructure system enables high voltage, high current operation, resulting in the demonstration of > 10× power performance than GaAs and Si technologies. The high RF power density (W/mm) translates into high watts per unit capacitance (W/pF), resulting in high impedance and simpler matching, an enabler for wide-bandwidth applications. This paper reviews the recent progress in material, device and circuit performance of GaN HEMTs by the Cree team.
Keywords :
III-V semiconductors; power HEMT; wide band gap semiconductors; AlGaN-GaN; circuit technology; device technology; heterostructure system; high electron mobility transistor; high frequency device; high power device; material technology; Capacitance; Circuits; Gallium arsenide; Gallium nitride; HEMTs; Impedance; MODFETs; Photonic band gap; Radio frequency; Voltage;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566398