DocumentCode :
2873917
Title :
High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition
Author :
Wei-Kuo Chen
Author_Institution :
Chiao-Tung University
fYear :
1994
fDate :
1994
Firstpage :
47216
Lastpage :
11787
Keywords :
Chemical vapor deposition; Crystallization; Doping profiles; Epitaxial growth; Gallium arsenide; Heating; Inductors; MOCVD; Molecular beam epitaxial growth; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771209
Filename :
771209
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873917
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