Title :
SOS MOSFETs for monolithic microwave ICs
Author :
Yu, Son-Cheol ; Eshbach, J. ; Ying Hwang ; Naster, R.
Author_Institution :
General Electric Research/Development, Schnectady, NY, USA
Abstract :
Large gate-width SOS MESFETs, operated at 3GHz, with output power densities of 175mW/mm,ηdrain = 51% and ηpower-added = 31%, will be described. Device impedances were measured versus power level.
Keywords :
Electrical resistance measurement; MESFETs; MOSFETs; Microstrip; Microwave devices; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156332
