• DocumentCode
    2874079
  • Title

    Quantum-mechanical enhancement of short-channel effects in ultra-thin SOI MOSFETs

  • Author

    Konishi, Hideki ; Sato, Shingo ; Komiya, Kenji ; Omura, Yasuhisa

  • Author_Institution
    Dept. of Electron., Kansai Univ., Osaka, Japan
  • fYear
    2004
  • fDate
    26-28 July 2004
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    In summary, in ultra-thin SOI MOSFETs, the DIBL was suppressed, while the charge-sharing effects are enhanced with distinct QMEs. Influences of distinct QMEs on drivability are the remaining issues.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; DIBL; charge-sharing effects; quantum-mechanical enhancement; short-channel effects; ultra thin SOI MOSFET; Capacitance; Doping; Electrodes; Electron devices; Hydrodynamics; MOSFETs; Manuals; Semiconductor process modeling; Surface resistance; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, 2004. International Meeting for
  • Print_ISBN
    0-7803-8423-7
  • Electronic_ISBN
    0-7803-8424-5
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2004.1566415
  • Filename
    1566415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874079