DocumentCode :
2874320
Title :
Heterojunction bipolar transistor technology for analog and digital applications
Author :
Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sheng, N.H. ; Ho, W.J. ; Wang, N.L. ; Higgins, J.A.
Author_Institution :
Rockwell Science Center
fYear :
1994
fDate :
1994
Firstpage :
37073
Lastpage :
38169
Keywords :
Breakdown voltage; FETs; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Lithography; Microwave circuits; Microwave transistors; Optical device fabrication; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771241
Filename :
771241
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874320
