DocumentCode
2874337
Title
Effects of conduction band discontinuity and two dimensional electron gas on the dc characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT´s
Author
Huang, Chao-Hsing ; Lee, Tsuen-Lin ; Lin, Hao-Hsiung
Author_Institution
National Taiwan University
fYear
1994
fDate
1994
Firstpage
38535
Lastpage
39631
Keywords
Chaos; Conducting materials; Doping; Double heterojunction bipolar transistors; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771245
Filename
771245
Link To Document