مرکز منطقه ای اطلاع رساني علوم و فناوري - In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

DocumentCode :

2874479

Title :

In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Author :

Chan, Yi-Jen ; Yang, Ming-Ta ; Wu, Chia-Song ; Chyi, Jen-Inn

Author_Institution :

National Central University

fYear :

1994

fDate :

1994

Firstpage :

44748

Lastpage :

45844

Keywords :

Conductivity; Current density; Cutoff frequency; Density measurement; FETs; Gallium arsenide; HEMTs; MODFETs; Transconductance; mHEMTs;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

Type :

conf

DOI :

10.1109/EDMS.1994.771266

Filename :

771266

Link To Document :