• DocumentCode
    2874804
  • Title

    256K dynamic random access memory

  • Author

    Benevit, C. ; Cassard, J. ; Dimmler, K. ; Dumbri, A. ; Mound, M. ; Procyk, F. ; Rosenzweig, W. ; Yanof, A.

  • Author_Institution
    Bell Laboratories, Allentown, PA, USA
  • Volume
    XXV
  • fYear
    1982
  • fDate
    10-12 Feb. 1982
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    THIS PAPER will report on the design of a 256K DRAM utilizing laser repairable redundancy?? and 2.3pm design rules which permit use of either scanning projection or direct step on wafer lithography. Chip area is 54.3mm2 and the cell array was organized to obtain a length to width ratio of 2.5:l so that a standard 0.3?? wide 16pin DIP could be used.
  • Keywords
    Aluminum; Capacitance; Clocks; DRAM chips; Decoding; Electronics packaging; Lithography; Optical design; Pulse amplifiers; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1982.1156371
  • Filename
    1156371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874804