DocumentCode :
2875058
Title :
The effects of AlGaAs cap layers on the dc and speed performance of GaAs metal-semiconductor-metal photodetectors
Author :
Yuang, Rong-Heng ; Shieh, Hung-Chang ; Lin, Ray-Ming ; Hung-Chang-Shieh ; Chyi, Jen-Inn
Author_Institution :
National Central University
fYear :
1994
fDate :
1994
Firstpage :
41582
Lastpage :
42678
Keywords :
Bandwidth; Buffer layers; Dark current; Electrodes; Fingers; Frequency; Gallium arsenide; Photodetectors; Photonic band gap; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771297
Filename :
771297
Link To Document :
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