• DocumentCode
    2875378
  • Title

    A 16K E2PROM

  • Author

    Yaron, G. ; Ebel, M. ; Prasad, Jagadish ; Leong, Ben

  • Author_Institution
    National Semiconductor Corp., Santa Clara, CA, USA
  • Volume
    XXV
  • fYear
    1982
  • fDate
    10-12 Feb. 1982
  • Firstpage
    108
  • Lastpage
    109
  • Abstract
    A 16K floating-gate thin oxide (<150Å) E2PROM utilizing a single direct wafer stepper masking step for the definition of the electron tunneling area ( 1.5\\times 1.5\\mu ^{2} ) will be discussed. Device requires only a dc level Vppsignal for its operation and features threshold bit mapping.
  • Keywords
    Nonvolatile memory; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1982.1156403
  • Filename
    1156403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2875378