DocumentCode
2875474
Title
A nitride-barrier avalanche-injection EAROM
Author
Hijiya, S. ; Ito, Takao ; Nakamura, T. ; Ishikawa, Hiroshi ; Arakawa, H.
Author_Institution
Fujitsu Laboratories, Inc., and Fujitsu Ltd., Kawasaki, Japan
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
116
Lastpage
117
Abstract
This report will cover a single 15V supply 2Kb EAROM with low voltage alterability achieved by the use of thermal nitride and a single polarity floating gate injection approach.
Keywords
EPROM; Energy barrier; Hot carriers; Insulation; Ion implantation; Low voltage; Nonvolatile memory; Photonic band gap; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156409
Filename
1156409
Link To Document