Title :
A GaAs 1K static RAM using tungsten-silicide gate self alignment technology
Author :
Yokoyama, N. ; Ohnishi, T. ; Onodera, H. ; Shinoki, T. ; Shibatomi, A. ; Ishikawa, Hiroshi
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Abstract :
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address access time of 4ns was obtained with power dissipation of 58mW.
Keywords :
Annealing; Circuits; FETs; Gallium arsenide; MESFETs; Random access memory; Read-write memory; Silicides; Substrates; Temperature;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156451
