Silicon carbide JFET resonant inverter for induction heating home appliances

Author

Gaudó, Pilar Molina ; Bernal, Carlos ; Otín, Aranzazu ; Burdío, José Miguel

Author_Institution

Group of Power Electron. & Microelectron. - GEPM, Univ. of Zaragoza, Zaragoza, Spain

fYear

2011

fDate

7-10 Nov. 2011

Firstpage

2551

Lastpage

2556

Abstract

This paper presents a one switch silicon carbide JFET normally-ON resonant inverter applied to induction heating for consumer home cookers. The promising characteristics of silicon carbide (SiC) devices need to be verified in practical applications; therefore, the objective of this work is to compare Si IGBTs and normally-ON commercially available JFET in similar operating conditions, with two similar boards. The paper describes the gate circuit implemented, the design of the basic converter in ideal operation, namely Zero Voltage Switching (ZVS) and Zero Derivative Voltage Switching (ZVDS), as well as some preliminary comparative results for 700W and 2 kW output power delivered to an induction heating coil and load.

Keywords

domestic appliances; induction heating; insulated gate bipolar transistors; junction gate field effect transistors; resonant invertors; silicon compounds; zero voltage switching; Si IGBT; SiC; consumer home cooker; gate circuit; induction heating coil; induction heating home appliance; induction heating load; one switch silicon carbide JFET normally-ON resonant inverter; zero derivative voltage switching; zero voltage switching; Electromagnetic heating; Inverters; JFETs; Logic gates; Silicon; Silicon carbide; Zero voltage switching; JFET; Silicon carbide (SiC); induction heating; resonant inverter; zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

IECON 2011 - 37th Annual Conference on IEEE Industrial Electronics Society

Conference_Location

Melbourne, VIC

ISSN

1553-572X

Print_ISBN

978-1-61284-969-0

Type

conf

DOI

10.1109/IECON.2011.6119711

Filename

6119711