• DocumentCode
    2877697
  • Title

    A 256 × 256-element Si monolithic IR-CCD sensor

  • Author

    Kimata, M. ; Denda, M. ; Yutani, N. ; Tsubouchi, N. ; Shibata, H. ; Kurebayashi, H. ; Uematsu, S. ; Tsunodo, R. ; Kanno, T.

  • Author_Institution
    Mitsubishi Electric Corp., Hyogo, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    254
  • Lastpage
    255
  • Abstract
    An IR CCD image sensor with a PtSi/p-Si Schottky-barrier detector, using three-level polysilicon and 2μm design rules, will be described. The sensor operates in the 3-5\\mu m spectral range.
  • Keywords
    Shift registers; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156540
  • Filename
    1156540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877697