Effects of side reservoirs on the electromigration lifetime of copper interconnects

Author

Mario, Hendro ; Gan, Chee Lip ; Lim, Yeow Kheng ; Tan, Juan Boon ; Wei, Jun ; Chookajorn, Tongjai ; Thompson, Carl V.

Author_Institution

Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

4

Abstract

A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to “trap” migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to `trap´ pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.

Keywords

adhesion; copper; electromigration; integrated circuit interconnections; reliability; silicon compounds; tantalum; voids (solid); Cu atoms; SiN-SiCN-Cu; Ta-Cu; adhesion strength; back-stresses; cathode end; copper interconnects; electromigration lifetime; electromigration reliability; side reservoir test structure; trap pre-existing voids; Cathodes; Copper; Electromigration; Integrated circuit interconnections; Reservoirs; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992779

Filename

5992779