DocumentCode :
2878146
Title :
A 25ns 8K × 8b static MTL/I2L RAM
Author :
Wiedmann, S. ; Heuber, K.
Author_Institution :
IBM Laboratories, Boeblingen, Germany
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
110
Lastpage :
111
Abstract :
An experimental 8K×8 I2L/MTL static RAM with 25/50ns access/cycle will be described. The chip dissipates 8mW in standby and 210mW selected. Less than 1μW is required for data retention.
Keywords :
Differential amplifiers; Electron devices; Isolation technology; Random access memory; Read-write memory; Signal detection; Solid state circuits; Switches; Temperature distribution; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156563
Filename :
1156563
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2878146
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