Title :
The Study on Sensitive Port of Silicon transistors Caused by ESD
Author :
Shufeng, QI ; Shanghe, Liu ; Hongbing, LIU ; Jie, Yang
Author_Institution :
Inst. of Electrostatic & Electromagn. Protection Res., Shijiazhuang Mech. Eng. Coll., Hebei
Abstract :
This paper deals with a sensitive ports study on typical silicon transistors caused by human body model (HBM) electrostatic discharge (ESD). It is shown that the most sensitive port is not always the EB junctions, as most scholars have stated
Keywords :
electrostatic discharge; elemental semiconductors; silicon; transistors; ESD; HBM; electrostatic discharge; human body model; silicon transistors sensitive port; Atmospheric modeling; Biological system modeling; Bipolar transistors; Circuit simulation; Electrostatic discharge; Humans; Microwave transistors; Silicon; Stress; Testing; ESD; sensitivity; transistor;
Conference_Titel :
Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
Conference_Location :
Dalian
Print_ISBN :
1-4244-0183-6
DOI :
10.1109/CEEM.2006.257908
