Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers

Author

Chen, I.L. ; Hsu, I.C. ; Lai, Fang-I ; Chiou, C.H. ; Kuo, H.C. ; Hsu, W.-C. ; Lin, G. ; Yang, H. P D ; Chi, J.Y.

Author_Institution

Nanophotonic Center, Ind. Technol. Res. Inst., Hsinchu

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We have made MOCVD-grown InGaAs photonic crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic applications. Multi-mode InGaAs VCSELs have achieved a maximum power of over 1 mW. Single-mode characteristics of 0.18 mW of the PhC-VCSELs have been made by using the combined AlOx oxide layer with proton-implantion for better current confinement.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; ion implantation; laser modes; optical fibre communication; photonic crystals; semiconductor lasers; surface emitting lasers; InGaAs; current confinement; fiber-optic applications; power 0.18 mW; proton-implantation; single mode photonic crystal VCSEL; single-transverse-mode operation; vertical-cavity surface-emitting lasers; Apertures; Fiber lasers; High speed optical techniques; Indium gallium arsenide; Laser modes; Photonic crystals; Quantum dot lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628735

Filename

4628735