High power GaSb-based optically pumped VECSEL at 2.3 μm

Author

Schulz, N. ; Rattunde, M. ; Manz, C. ; Köhler, K. ; Wild, C. ; Wagner, J.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report on the operation and characterization of a GaSb-based VECSEL at 2.33 mum. Using an intra-cavity CVD diamond heat spreader, a maximum output power of 0.6W was obtained, and still 0.4 W in TEM₀₀ mode (M²=1.1).

Keywords

III-V semiconductors; chemical vapour deposition; diamond; gallium compounds; laser beams; laser cavity resonators; laser modes; optical pumping; semiconductor lasers; surface emitting lasers; thermo-optical devices; C; GaSb; TEM₀₀ mode; high-power optically pumped VECSEL; intra-cavity CVD diamond heat spreader; power 0.4 W; power 0.6 W; wavelength 2.33 mum; Gas lasers; Laser beams; Laser modes; Optical pumping; Optical resonators; Power generation; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.3070) Infrared and far-infrared lasers; (140.3570) Lasers, single-mode; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628737

Filename

4628737