Title :
Lasing characteristics of GaN vertical-cavity surface-emitting lasers with dielectric DBRs fabricated by laser-lift-off technique
Author :
Chu, Jung Tang ; Yao, Hsin Hung ; Liang, Wen Deng ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, S.C.
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The lasing characteristics of a GaN VCSEL with two dielectric DBRs of SiO2/TiO2 and SiO2/Ta2O5 were investigated. The laser emits wavelength at 414 nm under optical pumping at room temperature with a threshold energy of 270 nJ.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; laser beams; optical fabrication; optical pumping; silicon compounds; surface emitting lasers; tantalum compounds; titanium compounds; GaN; SiO2-Ta2O5; SiO2-TiO2; VCSEL; dielectric DBR; energy 270 nJ; laser threshold energy; laser-lift-off technique; lasing characteristics; optical pumping; temperature 293 K to 298 K; vertical-cavity surface-emitting lasers; wavelength 414 nm; Dielectrics; Distributed Bragg reflectors; Gallium nitride; Optical pumping; Pump lasers; Quantum well devices; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; (140.2020) Diode lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628739
