DocumentCode :
2879873
Title :
256Kb CMNOS EPROM
Author :
Ip, W.H ; Te-Long Chiu ; Tsung-Ching Wu ; Perlegos, G.
Author_Institution :
SEEQ Technology, Inc., San Jose, CA
Volume :
XXVII
fYear :
1984
fDate :
22-24 Feb. 1984
Firstpage :
138
Lastpage :
139
Abstract :
A 125ns, 50mW 256Kb EPROM featuring 12V-16V programming will be described. The design utilizes a 1.5μm N-well CMOS on epi technology resulting In a cell size of 37.5μm2and a die size of 180 mil ×180 mil.
Keywords :
CMOS technology; Circuits; Current supplies; Decoding; EPROM; Electric variables; Latches; Low voltage; Power dissipation; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1984.1156664
Filename :
1156664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2879873
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