DocumentCode :
2880289
Title :
Shared word line DRAM-cell
Author :
Scheuerlein, R. ; Walker, W. ; Morency, D. ; Noble, W. ; Bakeman, P. ; Critchlow, D.
Author_Institution :
IBM General Tech. Div., Essex Junction, VT, USA
Volume :
XXVII
fYear :
1984
fDate :
22-24 Feb. 1984
Firstpage :
280
Lastpage :
281
Abstract :
A 44μm2memory cell with a 2 to 1 density advantage compared to a conventional 1-Tr DRAM cell, will be described.
Keywords :
Capacitors; Circuit testing; Electrons; FETs; Implants; Operational amplifiers; Random access memory; Read-write memory; Signal processing; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1984.1156688
Filename :
1156688
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2880289
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