DocumentCode
2880455
Title
Opportunities and limitations in ultra high speed SRAMs
Author
Herndon, W.
Author_Institution
Fairchild Advanced Res. Center, Palo Alto, CA, USA
Volume
XXVII
fYear
1984
fDate
22-24 Feb. 1984
Firstpage
254
Lastpage
255
Abstract
Several design approaches and technologies have shown impressive abilities to produce SRAMs with densities greater than 1Kb and access times less than 25ns. Panelists will examine opportunities to develop further these technologies and produce a density of ≥64Kb and access time of ≤5ns. Issues to be probed include the access time of merged bipolar memories and the cell sizes and economics of GaAs memories.
Keywords
Delay; Design engineering; Gallium arsenide; Integrated circuit interconnections; Lithography; MOS devices; Power system reliability; Random access memory; Read-write memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1984.1156696
Filename
1156696
Link To Document