CIS solar cells with ZnO windows deposited by ALE

Author

Stolt, Lars ; Hedström, Jonas ; Skarp, Jarmo

Author_Institution

Uppsala Univ., Sweden

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

250

Abstract

In an effort to find a process for deposition of the ZnO layer suitable for large scale fabrication of CIS cells the ALE method was investigated. In this study devices have been made with ZnO grown by ALE at temperatures which has been varied in the 125-200°C interval. We find that high deposition temperatures have to be avoided in order not to degrade the open circuit voltage and fill factor of the devices. On the other hand the higher temperatures are needed to obtain high conductivity in the doped ZnO layer. In spite of that, devices with up to 14% efficiency were fabricated. Experiments where we omitted the CdS layer, normally used in CIS cells, were carried out. A promising result of 11% efficiency was obtained

Keywords

atomic layer epitaxial growth; copper compounds; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; 11 percent; 125 to 200 C; 14 percent; ALE method; CIS solar cells; CuInSe₂; CuInSe₂ thin film solar cells; ZnO; ZnO layer deposition; ZnO windows; doped ZnO layer; fill factor; high conductivity; high deposition temperatures; large scale fabrication; open circuit voltage; Circuits; Computational Intelligence Society; Conductivity; Degradation; Fabrication; Large-scale systems; Photovoltaic cells; Temperature; Voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519855

Filename

519855