Title :
Silicon bipolar 6.2G Hz 300mW frequency dividers
Author :
Onodera, K. ; Sawairi, A. ; Hara, Y. ; Kusama, N.
Author_Institution :
NEC System LSI Development Division, Kanagawa, Japan
Abstract :
This paper will describe a divide-by-4 frequency divider for the local oscillator in a microwave communication system operating at 6.2GHz and dissipating 300mW. The circuit consists of self-aligned silicon bipolar transistors fabricated with 1.25μ lithography which have a cutoff frequency of 11GHz.
Keywords :
Bipolar transistors; Capacitors; Circuits; Frequency conversion; Gallium arsenide; Local oscillators; Microwave communication; National electric code; Power dissipation; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156730
