DocumentCode :
2881705
Title :
A 1Mb CMOS DRAM
Author :
Kirsch, H. ; Clemons, D. ; Davar, S. ; Harman, J. ; Holder, C. ; Hunsicker, W. ; Procyk, F. ; Stefany, J. ; Yaney, D. ; Petrizzi, J.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
256
Lastpage :
257
Keywords :
Aluminum; Bandwidth; CMOS process; Capacitance; Circuits; Decoding; Dielectric substrates; Latches; Random access memory; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156770
Filename :
1156770
Link To Document :
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