IGBT turn-off characteristics and high frequency application

IGBT devices are becoming increasingly popular for medium to high power electronic applications. They offer simple drive requirements, a low on-state loss and relatively fast switching characteristics. The principle restriction on the operating frequency that may be obtained with IGBT devices is switching loss, which in general remains significantly greater than that associated with MOSFET devices of a similar rating. A technique proposed to reduce the switching loss of IGBTs involves the use of a parallel MOSFET. This in principle would allow the circuit to take advantage of the low on-state loss of the IGBT coupled with the fast switching of the MOSFET