DocumentCode
2881890
Title
Technology Trends in Power Devices
Author
Platzoeder, K. ; Tihanyi, J.
Author_Institution
Siemens AG, Frankfurter Ring 152, 8000 Muenchen 46, West Germany
fYear
1982
fDate
3-6 Oct. 1982
Firstpage
1
Lastpage
5
Abstract
At switching powers below 10 kVA the classical bipolar devices are attacked by MOSFETs. Their main advantages are higher switching speed and less expensive drive circuits. In the power range up to 100 kVA large bipolar transistors with votlages of 400 - 1000 V are of growing interest. On the other hand, asymmetric thyristors (ASCR) and gate turn-off thyristors (GTO) can also reduce weight and volume of the equipment. Above 100 kVA thyristors still dominate due to their unsurpassed current and voltage capability.
Keywords
Baseband; Communication system control; Control systems; Frequency conversion; Low pass filters; Power generation; Power harmonic filters; Read only memory; Sampling methods; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 1982. INTELEC 1982. International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/INTLEC.1982.4793691
Filename
4793691
Link To Document