DocumentCode
288190
Title
Open cell technology paves the way to single chip MOSFETs, IGBTs, and MCTs for very high power applications
Author
Grafham, Denis R.
fYear
1994
fDate
34449
Firstpage
42370
Lastpage
42372
Abstract
Open single-cell technology is currently employed to fabricate power MOSEET and IGBT chips in sizes from (5.05 mmx5.16 mm) to (14.86 mmx18.75 mm). The largest chip yields an IGBT of 200 A at 1000 V, or 300 A at 600 V. As a MOSFET it gives 36 A at 1000 V. At present, these monolithic MOS-controlled chips are the largest produced commercially today. While the original process was optimized for the production of 500 V or greater devices, more recent developments have extended its validity downwards to 100 V. Extension upwards to 1200 V and above is currently underway. The nature of the process, in particular the topside topology, is also conducive to the fabrication of very large diameter high voltage MCTs. Such chips could be encapsulated in double-side cooled press-pack housings for optimum thermal management and silicon utilization
fLanguage
English
Publisher
iet
Conference_Titel
Devices, Drive Circuits and Protection, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
369828
Link To Document