DocumentCode
288244
Title
History of the GaAs FET at Caswell (1964-1985)
Author
Turner, James
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fYear
1994
fDate
34502
Firstpage
42370
Lastpage
42372
Abstract
The author presents a brief history of research and development of the GaAs MESFET at Caswell. Topics discussed include operating frequency problems, power MESFETs and X-band GaAs ICs
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; history; microwave field effect transistors; power MESFET; Caswell; GaAs; GaAs MESFET; X-band GaAs ICs; history; operating frequency; power MESFETs; research and development;
fLanguage
English
Publisher
iet
Conference_Titel
Modelling, Design and Application of MMIC's, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
369909
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