DocumentCode
288253
Title
Thermal and dispersion modelling of MESFETs
Author
Jastrzebski, Adam K.
Author_Institution
Electron. Eng. Labs., Kent Univ., Canterbury, UK
fYear
1994
fDate
34502
Firstpage
42401
Lastpage
42406
Abstract
Typical modelling approaches for nonlinear MESFETs, based on S-parameter and DC I-V measurements, are critically analysed. A new model for channel current is proposed which is extracted from pulsed I-V, temperature and dispersion characterisation. A dedicated measurement system designed to perform the characterisation is described. The ability of the model to predict frequency dispersion and power dissipation effects is shown using the example of a power MESFET
Keywords
electric current measurement; power MESFET; semiconductor device models; semiconductor device testing; temperature measurement; voltage measurement; DC I-V measurements; S-parameter; channel current; dispersion modelling; frequency dispersion; measurement system; nonlinear MESFET; power MESFET; power dissipation; pulsed I-V characteristics; temperature characteristics; thermal modelling;
fLanguage
English
Publisher
iet
Conference_Titel
Modelling, Design and Application of MMIC's, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
369918
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