Title :
Thermal and dispersion modelling of MESFETs
Author :
Jastrzebski, Adam K.
Author_Institution :
Electron. Eng. Labs., Kent Univ., Canterbury, UK
Abstract :
Typical modelling approaches for nonlinear MESFETs, based on S-parameter and DC I-V measurements, are critically analysed. A new model for channel current is proposed which is extracted from pulsed I-V, temperature and dispersion characterisation. A dedicated measurement system designed to perform the characterisation is described. The ability of the model to predict frequency dispersion and power dissipation effects is shown using the example of a power MESFET
Keywords :
electric current measurement; power MESFET; semiconductor device models; semiconductor device testing; temperature measurement; voltage measurement; DC I-V measurements; S-parameter; channel current; dispersion modelling; frequency dispersion; measurement system; nonlinear MESFET; power MESFET; power dissipation; pulsed I-V characteristics; temperature characteristics; thermal modelling;
Conference_Titel :
Modelling, Design and Application of MMIC's, IEE Colloquium on
Conference_Location :
London
