Toward an Understanding and Optimal Utilization of Third-Generation Bipolar Switching Transistors

A new generation of high voltage bipolar switching transistors is introduced. It is demonstrated that 50 nS turn-off crossover times at elevated temperatures can be readily achieved. An attempt is made to develop a sound qualitative understanding of the effects of base drive upon overall transistor performance. A charge control concept is utilized to bridge the gap between stimulus (base drive) and response (collector current and voltage).