Title :
Preparation and characterization of CdTe thin films deposited by CSS
Author :
Gordillo, G. ; Florez, J.M. ; Hernandez, L.C. ; Teherán, P.
Author_Institution :
Dept. de Fisica, Univ. Nacional de Colombia, Bogata, Colombia
Abstract :
CdTe polycrystalline thin films were grown using a new procedure based on the CSS technique. With an adequate control of the deposition parameters, it was possible to grow CdTe films with grain sizes greater than 45 μm. The samples were characterized by XRD, SEM and EDS measurements. The studies revealed that the substrate and sublimation temperatures influence strongly the crystallographic orientation of the films, which grow with a mixed structure of cubic and hexagonal phases. EDS analysis carried out on different samples, showed a significant influence of some deposition parameters on the chemical composition of the CdTe films. The effect of introducing O2 during the deposition of the CdTe films, on the resistivity and crystallographic properties is also discussed
Keywords :
II-VI semiconductors; X-ray diffraction; cadmium compounds; crystal orientation; electrical conductivity; scanning electron microscopy; semiconductor growth; semiconductor thin films; solar cells; sublimation; vapour deposited coatings; CSS technique; CdTe; CdTe polycrystalline thin films; CdTe thin films deposition; EDS measurements; SEM; XRD; chemical composition; crystallographic orientation; crystallographic properties; cubic phase; grain sizes; hexagonal phase; resistivity; semiconductor growth; solar cells; sublimation temperature; substrate temperature; Cascading style sheets; Chemical analysis; Conductivity; Crystallography; Grain size; Size control; Sputtering; Temperature; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519869
