DocumentCode
2882935
Title
Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method
Author
Fukuda, Toshikazu ; Hayakawa, Shigeyuki ; Shigyo, Naoyuki
Author_Institution
Dept. of Syst. LSI Design, TOSHIBA Corp., Kawasaki
fYear
2006
fDate
26-28 April 2006
Firstpage
1
Lastpage
3
Abstract
Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology
Keywords
SRAM chips; alpha-particles; embedded systems; radiation effects; 45 nm; alpha SER; collection efficiency; device critical charge; diffusion area function; embedded-SRAM; neutron SER; soft error rate; Acceleration; Circuit noise; Circuit simulation; Error analysis; Large scale integration; Neutrons; Noise generators; Packaging; Random access memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test, 2006 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
1-4244-0179-8
Electronic_ISBN
1-4244-0180-1
Type
conf
DOI
10.1109/VDAT.2006.258118
Filename
4027490
Link To Document