Title :
Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method
Author :
Fukuda, Toshikazu ; Hayakawa, Shigeyuki ; Shigyo, Naoyuki
Author_Institution :
Dept. of Syst. LSI Design, TOSHIBA Corp., Kawasaki
Abstract :
Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology
Keywords :
SRAM chips; alpha-particles; embedded systems; radiation effects; 45 nm; alpha SER; collection efficiency; device critical charge; diffusion area function; embedded-SRAM; neutron SER; soft error rate; Acceleration; Circuit noise; Circuit simulation; Error analysis; Large scale integration; Neutrons; Noise generators; Packaging; Random access memory; Testing;
Conference_Titel :
VLSI Design, Automation and Test, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0179-8
Electronic_ISBN :
1-4244-0180-1
DOI :
10.1109/VDAT.2006.258118
