Title :
Equilibrium and nonequilibrium gain modelling in semiconductor lasers
Author :
Thranhardt, A. ; Becker, S. ; Koch, S.W. ; Hader, J. ; Moloney, J.V.
Author_Institution :
Dept. of Phys., Philipps-Marburg Univ., Marburg, Germany
Abstract :
This paper presents laser gain calculations for different material systems, like the metastable dilute nitride system GaInNAs/GaAs. These calculations show good agreement with experiment. On the other hand, nonequilibrium effects in different regimes as well as dependence of scattering times on structural parameters such as material composition and well width are also discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; light scattering; metastable states; quantum well lasers; semiconductor device models; GaInNAs-GaAs; equilibrium gain modelling; laser gain calculations; material composition; metastable dilute nitride system; nonequilibrium effects; nonequilibrium gain modelling; quantum well width; scattering time dependence; semiconductor lasers; structural parameters; Equations; Laser modes; Laser theory; Mathematical model; Microscopy; Optical materials; Optical scattering; Particle scattering; Predictive models; Semiconductor lasers;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567189
