DocumentCode
2883003
Title
High speed LSI technologies challenging the CMOS VLSI era
Author
Greiling, P.
Author_Institution
Hughes Research Labs., Malibu, CA, USA
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
234
Lastpage
235
Abstract
The dominant VLSI technology for the next decade will be CMOS. Emerging technologies such as GaAs FETs, AlGaAs high electron mobility transistors, AlGaAs heterojunction bipolar transistors and Si bipolar transistors are all attempting to demonstrate performance advantages and specialized applications for each technology . . . The panel will address the potential role of these niche technologies in a CMOS VLSI dominated era.
Keywords
CMOS process; CMOS technology; Gallium arsenide; HEMTs; Integrated circuit technology; Large scale integration; Parallel processing; Silicon; Space technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156842
Filename
1156842
Link To Document