• DocumentCode
    2883003
  • Title

    High speed LSI technologies challenging the CMOS VLSI era

  • Author

    Greiling, P.

  • Author_Institution
    Hughes Research Labs., Malibu, CA, USA
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    The dominant VLSI technology for the next decade will be CMOS. Emerging technologies such as GaAs FETs, AlGaAs high electron mobility transistors, AlGaAs heterojunction bipolar transistors and Si bipolar transistors are all attempting to demonstrate performance advantages and specialized applications for each technology . . . The panel will address the potential role of these niche technologies in a CMOS VLSI dominated era.
  • Keywords
    CMOS process; CMOS technology; Gallium arsenide; HEMTs; Integrated circuit technology; Large scale integration; Parallel processing; Silicon; Space technology; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156842
  • Filename
    1156842