• DocumentCode
    2883284
  • Title

    A high density CMOS process

  • Author

    Luscher, R. ; De Zaldivar, J.

  • Author_Institution
    Faselec AG/Philips, Zurich, Switzerland
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    260
  • Lastpage
    261
  • Abstract
    A 3μ CMOS process yielding circuit densities comparable to 1.5μ design rules will be reported. The procedure was used to construct an 8b microcomputer for telecom use: clock frequency was 20MHz at 9V; 50k transistors were placed in an area of 31mm2.
  • Keywords
    CMOS process; Circuit testing; MOS capacitors; Mesh generation; Oxidation; Production; Read only memory; Secondary generated hot electron injection; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156860
  • Filename
    1156860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883284