Ultrafast hole-burning in intersubband absorption lines of GaN/AlN superlattices

Author

Wang, Z. ; Reiman, K. ; Woerner, M. ; Elsaesser, T. ; Baumann, E. ; Giorgetta, F.R. ; Hofstetter, D. ; Wu, H. ; Schaff, W.J. ; Eastman, L.F.

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Femtosecond two-color pump-probe experiments on intersubband absorption spectra of electrons in a GaN/AlN superlattice show distinct spectral holes unraveling both the homogeneous broadening contribution and the underlying optical phonon progression.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical hole burning; semiconductor superlattices; wide band gap semiconductors; GaN-AlN; femtosecond two-color pump-probe; homogeneous broadening contribution; intersubband absorption lines; optical phonon progression; superlattices; ultrafast hole-burning; Absorption; Electron optics; Gallium nitride; Nonlinear optics; Optical coupling; Optical pulses; Optical pumping; Optical superlattices; Phonons; Ultrafast optics; (160.6000) Semiconductors, including MQW; (320.7130) Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628973

Filename

4628973