DocumentCode :
2883583
Title :
Opposite side floating gate SOI FLASH memory cell
Author :
Lin, Xinnan ; Chan, Mansun ; Wang, Hongmei
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fYear :
2000
fDate :
2000
Firstpage :
12
Lastpage :
15
Abstract :
An opposite side floating gate SOI FLASH memory cell has been proposed for advanced device scaling. The new structure has the read gate and floating gate on the opposite sides of the active silicon film. It allows the use of a thick tunneling oxide to prevent charge leakage and a thin gate oxide for device scaling. The functionality of the device is demonstrated through the analysis of threshold voltage shift before and after programming. The effects of various parameters such as front and back gate oxide thickness, silicon film thickness and channel doping on device performance have been studied and a possible way to fabricate the device is proposed
Keywords :
flash memories; silicon-on-insulator; Si-SiO; advanced device scaling; channel doping; opposite side floating gate SOI FLASH memory cell; oxide thickness; silicon film thickness; threshold voltage shift; CMOS technology; Flash memory cells; MOSFET circuits; Nonvolatile memory; Semiconductor films; Silicon; Thickness control; Threshold voltage; Tunneling; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
Type :
conf
DOI :
10.1109/HKEDM.2000.904205
Filename :
904205
Link To Document :
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