Title :
Direct observation of ordered structures during oxidation of Si(111)
Author :
He, J.Z. ; Xu, J.B. ; Xu, M.S. ; Xu, J. ; Ng, C.H. ; Wilson, I.H.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate
Keywords :
elemental semiconductors; monolayers; oxidation; scanning tunnelling microscopy; silicon; surface structure; Si; full monolayer; ordered structures; oxidation; submonolayer; surface structure; variable-temperature ultra high vacuum scanning tunnelling microscopy; Amorphous materials; Crystallization; Insulation; Lattices; Oxidation; Semiconductor films; Semiconductor materials; Silicon compounds; Silicon on insulator technology; Substrates;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904209
