Title :
Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices
Author :
Lin, S.C. ; Yuan, K.H. ; Kuo, James B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects
Keywords :
MIS devices; semiconductor device models; silicon-on-insulator; 2D simulation; MEDICI; SOI partially-depleted dynamic-threshold MOS device; drain-induced barrier lowering; quasi-2D analytical model; short channel effect; Analytical models; Boundary conditions; Electrostatics; Inverters; MOSFET circuits; Poisson equations; Predictive models; Thin film devices; Threshold voltage; Transistors;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904213
