• DocumentCode
    2883928
  • Title

    A 3ns 32K bipolar RAM

  • Author

    Yuen Chan ; Brown, Jason ; Nijhuis, R. ; Rivadeneira, C. ; Struk, J.

  • Author_Institution
    IBM General Technology Division, Hopewell Junction, NY, USA
  • Volume
    XXIX
  • fYear
    1986
  • fDate
    19-21 Feb. 1986
  • Firstpage
    210
  • Lastpage
    211
  • Abstract
    A 3ns 32K bipolar SRAM with an unclamped complementary transistor switch memory cell, affording the advantages of 20%-30% smaller area, higher soft error immunity and improved leakage tolerance, will be described. A polysilicon trench isolation process with 1.5μm lithography provided a die area of 33.5mm2.
  • Keywords
    Capacitance; Decoding; Driver circuits; Isolation technology; Lithography; Pulsed power supplies; Random access memory; Read-write memory; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
  • Conference_Location
    Anaheim, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1986.1156896
  • Filename
    1156896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883928